The effect of tin oxide dopant concentration on structural and optical properties of indium oxide thin layer prepared by electron beam evaporation

Indium Tin Oxide (ITO) thin layers were deposited on glass substrates by electron beam evaporation technique using a various mixtures from 60 to 95wt% indium oxide and 40 to 5wt% tin oxide. Aftter deposition, the films were annealed in air for 3h at 450ْC. The effect of dopant concentration on structural and optical properties of these layers were investigated. It was observed that by increasing of dopant concentration to 20wt%, band gap and grain sizes were increased. The highest energy gap and highest grain size were evaluated to be 3. 71eV and 23nm, respectively in the layers with 20wt% tin oxide.