Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Polyvinylpyrrolidone / Nickel oxide (PVP/NiO) dielectrics were fabricated with sol-gel method using 0.2 g of PVP at different working temperatures of 80, 150 and 200 ºC. Structural properties and surface morphology of the hybrid films were investigated by XRay diffraction (XRD) and Scanning Electron Microscope (SEM) respectively. Energy dispersive X-ray spectroscopy (EDX) was used to make a quantitative chemical analysis of an unknown material. The obtained results demonstrate the feasibility of using high dielectric constant nanocomposite PVP/NiO as gate dielectric insulator in the organic thin film transistors (OTFTs).