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This paper presents design and simulation of a new MEMS switch for high frequencies applications. The designed structure is an in-line capacitive shunt fixed-fixed beam switch. The switch has a cross-shaped gold beam. It is optimized to have an excellent electromagnetic performance in the range of 20-100 GHz. It provides very high isolation in the off-state, -23 dB at 20 GHz and -26 dB at 100 GHz. It also provides low insertion loss in the on-state, -0.16 dB at 20 GHz and -1.2 dB at 80 GHz. The switch is designed in a way that besides having a proper electromagnetic performance, the actuation voltage is also reduced. The innovation of the design is the cross shape of the beam which causes the actuation voltage to decrease in comparison with a simple structure. The actuation voltage is 30 V. Electromagnetic and mechanical analysis and simulations of the switch are presented.