Quantum-Dot Semiconductor Optical Amplifier: Performance and Application for Optical Logic Gates

We proposed a novel structure of ultrafast all optical Feynman logic gate based on the cross-phase modulation that is principle nonlinear effect in a quantum dot semiconductor optical amplifier assisted with a Mach-Zehnder interferometer at the wavelength of 1.55 µm. To realize ultrafast mechanism, an active layer with a thickness of 1.7-µm, and the confinement factor of 0.75 and 0.7 respectively for both TE0 and TM0 modes, are provided. By solving the rate equations, a gain difference up to 0.1 dB has been obtained. The proposed structure has the potential application in advanced optical devices such as optical memristors.