Analysis and Simulation of Transport in Monolayers TiS3

High optical response and anisotropy in electrical and optical properties, adjustable Schottky barrier, make Monolayers TiS3 as a candidate material to fabricate sensitive photo detectors, integrated convertors and polarized light emission devices. To Study of applications, transport is avoidable, This paper, studies transport of Monolayers TiS3 channel by the non-equilibrium green function method (NEGF) with DFT in TranSieta package. A device composed of 2 Au electrode and 13-unit cell as channel of TiS3 monolayer was simulated. Calculation of I-V curves reveals negative resistant from 1.6 V to 1.8 V as bias voltage in electrodes. To explain this events, study of PDOS, shows quality of charge carriers in negative interval, has been reduced which result in negative resistant.