Investigating the Influence of Number of Carbon Atoms Along the Width of Graphene Nanoribbon on the current of a Graphene Single Electron Transistor

A single electron transistor is a nanoscale device comprised of three metallic electrodes and one island or quantum dot. The island can made of carbon nano materials like a graphene nanoribbon. The number of carbon atoms along the width of the graphene nanoribbon affect on the speed of transistor operation and coulomb blockade region. In this research, the current for a single electron transistor utilizing a graphene nanoribbon island is modeled. The impact of several parameters on the transistor current is investigated including the number of carbon atoms along the width, length of nanoribbon, and the applied gate voltage. The modeling results show that increasing the number of carbon atoms along the width of the nanoribbon results in reduced coulomb blockade region. Moreover, reducing the length of nanoribbon and increasing the applied gate voltage cause a decrease in the zero current range of the transistor. Increasing the number of atoms along the width of three islands also gives a boost in the electron tunneling region and thus, the transistor performance will be improved.