Investigating the Twisted Effect on Electronic Properties of Graphene and Boron- Nitride Bilayers Nanostructures

In this paper, the electrical properties of graphene and boron nitride are studied. The effect of the layers on each other and also the twisting of the layers on each other were studied. The presence of an additional layer creates additional levels, which, in the case of graphene, maintains the conductivity of the material, but reduces its mobility dramatically. The curvature of graphene and boron nitride increases the number of energy strips to eight. Increasing the bending angle leads to the movement of the point of attachment of the conduction edges and also to the movement of the capacity of the graphene to the center of the region of the brillouin. . In the case of boron nitride, the curvature transfers the band gap to the center of the brillouin region. This transmission increases with increasing the angles of twisting.