IMPURITY-LIMITED ELECTRON MOBILITY IN A SEMICONDUCTOR QUATUM WIRE

Recent astonishing progresses in crystal growth technology, i.e. molecular beam epitaxy, have provided the possibility of fabricating quantum well structures in which electrons confined to move in one or two dimensions. The motion of electrons in such semiconducting structures is confined and leads to size quantization effects. In this research, we investigated the limited mobility by ionized impurity scattering or from the uniform distribution of remote impurity for a one-dimensional semiconductor device such as n-type gallium arsenide and Indium Arsenide nanowire, which first calculated and then plotted. The effect of various relevant physical parameters such as temperature and radius and impurity density on mobility has been investigated. Numerical results show that limited mobility increases uniformly and slowly with increasing temperature due to background impurity scattering, while limited mobility increases rapidly with temperature due to scattering of remote impurities. It has also been shown that the mobility for both impurities decreases with increasing wire radius and with increasing density, mobility increases. The results obtained from this investigation are in agreement to recent experimental and theoretical data.