Improvement the Efficiency CIGS Thin Film Solar Cells by Changing the Doping of the Absorbent Layer and Adding the InAsP Laye

In this article the function of solar cells with the structure of CuIn1xGaxSe2 is examined. CIGS solar cell consists of layers of ZnO (Layer TCO), Cd_S (buffer layer), CIGS (Absorbent layer), and Layer MO (Substrate), which Cd_S and CIGS layers form a PN Junction. CIGS Thin Film Solar Cell is simulated using SILVACO software. The absorbent layer doping was originally changed. Later doping was kept constant and P-type layer of InAsP was added. Their effect on cell function was observed and examined. It was observed that after doping some parameters of the solar cell have improved whilst some others had decreased. It was also concluded that examined increase of decrease in the amount of dopant would reduce our efficiencies of solar cell. Added the InAsP layer leads to increased open circuit voltage, short circuit current and the solar cell power, consequently gives the yields about 33.2%, which is acceptable efficiency.