A 3.1-10.6 GHz HEMT Distributed Amplifier for Ultra-Wideband Application
Abstract:
Distributed integrated circuit creation applies design methods that have been investigated for nearly seventy years to the rapidly evolving semiconductor process technologies of the modern IC landscape. Simply stated, it is an approach whereby the combination of multiple parallel signals results in increased bandwidths, enhanced power combining faculties, and often novel design capabilities for a given IC process. Consequently, the focus of this thesis is upon the application of distributed integrated circuit methodologies towards the realization of a distributed broadband amplifier in a commercial HEMT process technology. On-chip spiral inductors were utilized in on-chip bias circuitry. The measured performance of the DA was found to be significantly degraded from that of initial simulation by the poor performance of the fabricated inductors. In addition to serving as a portion of the author''s thesis requirements, the fabricated chips are to be incorporated into a university laboratory session in subsequent semesters. We present an analysis of distributed amplifiers suitable for use in the microwave regime. The 4- stage design achieves 15.5 dB of power gain (±0.5 dB) from 3.1 to 10.6 GHz. Reflected power at the input and output from loads matched to 50 Ohms are all below –10 dB over the bandwidth of the device, as is power transmitted from the output to the input. The device is stable for broad range of input and output loads.
Language:
English
Published:
Majlesi Journal of Electrical Engineering, Volume:6 Issue: 4, Dec 2012
Page:
63
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