The Effect of Material and Thickness of Cladding Layers on the Efficiency of Gan Based Quantum Well Laser Diodes

The performance characteristics of the deep violet In0.082Ga0.918N/GaN double quantum well (DQW) laser diodes (LDs) has been numerically investigated by using ISE TCAD software. The role of thickness and Al composition of AlGaN Cladding layers on the different performance characteristics including output power, threshold current, and slope efficiency, DQE, and optical intensity has been studied. Simulation results indicated that DQE and slope efficiency increase, while output power and threshold current decrease on the average by increasing AlGaN composition of cladding layers. Output power increases with increasing AlGaN cladding thickness because of increasing electron and hole carrier densities in Quantum wells and consequently, increasing radiative recombination. The slight increase were observed in QW electron and hole carrier densities of deep violet In0.082Ga0.918N/GaN DQW LDs with increasing cladding layer thickness