Effect of Concentration and Thickness of Aluminum Contamination on the Properties of Structural, Optical and Electrical of Tin Oxide ( Sno₂ )Thin Films Doped With Aluminum

In this experimental work Al doped tin oxide thin films with different composition of 5 to 10 mass percent of Al and 95 to 90 mass percent of SnO2 were deposited on glass substrates by electron beam evaporation technique. Then effects Al and thickness on the electrical, optical and structural properties of thin films were investigated. Properties of thin films have been studied using X-ray diffraction, UV-Visible spectrophotometer and four probe methods. XRD photographs were prepared and show the polycrystalline structure formation and preferred orientation (110). Also by increasing films thickness, optical transmission and resistivity are decreased. So that in the case of the films with 7.5 mass percent of Al, the average transmission decreases from
88.5 % for film with a thickness of 250 nanometer to 82.3 % for film with a thickness of 450 nanometer and resistivity reaches to its minimum value of 5.247×10-4 .cm for the sample with a thickness of 450 nm.