In this paper, CZTS and CZTSe thin-film solar cells with FTO / CdS / CZTS (CZTSe)/ Mo structure are simulated, considering the impact of defects and recombination. The effects of temperature, bandgap energy, thickness and doping concentration of the absorber layers, as well as the effects of the thickness and doping concentration of the buffer layer on the cells performance were investigated and compared with each other. It is shown that the CZTS solar cell has a higher open circuit voltage (Voc = 0.95 V) while the CZTSe solar cell has a higher short circuit current density (Jsc = 31 mA / cm2). At 300 k, the maximum efficiencies of 17.44% and 14.28% were obtained for the optimum CZTS and CZTSe cells, respectively. The efficiency has been improved significantly compared to the previous works. It was also shown that the efficiency of CZTS cell is less temperature dependent. All simulations were done under AM1.5 illumination.
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