Photoluminescence Emission Properties of Nanostructured Co:CdZnS Thin Films Prepared by Chemical Bath Deposition Method

n this study, it was tried to prepare nanostructured thin films of Co-doped CdZnS Co:CdZnS with relative single dopant-related emission peak, through optimization of several experimental parameters, and using chemical bath deposition technique. Results demonstrated that the intense emission peak around 530 nm can be attributed to the recombination of charge carriers through mid-gap localized energy levels of cobalt ions. The X-ray diffraction patterns of Co:CdZnS thin films, also revealed that increasing deposition temperature leads to an increase in the size of nanocrystals. The suitable quality of surface characteristics of the layer at each deposition temperature was demonstrated by field emission-scanning electron microscopy. The emission characteristics of these layers show their suitable applicable potentials as light-emitting structures in nanoscale optoelectronic devices.