Investigation of nano structural properties of Ag/SiO2

Field effect transistor is of importance in the integrated circuit. The metal electrode is on a silicon dioxide layer and is grown on a silicon substrate. We used silver as the electrode. The structural properties of a single silver layer on top of the silicon oxide film has been studied using synchrotron radiation, sensitive to changes in a chemical environment, permits high resolution photoelectron spectroscopy of nano thickness silver film on top of oxide. The local variations of the demonstrated a good uniformity of coverage oxide film and the weaker electrical field across the thinner oxide film (< 2 nm) respect to thicker oxide film.