Investigating the effect of non-metal ion concentration in cadmium selenide nanostructure semiconductors in the state of thin films

In this work, an attempt was made to prepare thin layers of nanostructured cadmium selenide (CdSe) based on a simple solution method of chemical bath deposition (CBD), which commercially has an accessible precursor. In the chemical solution bath layering method, manufacturing factors play a significant role and determine the characteristics of the final product. In this research, the effect of an important factor, the concentration of primary solutions of selenium and cadmium ions, which is one of the most important factors in the formation of cadmium selenide, and it will be observed that the change in the concentration of these metal and non-metal ions strongly affects the type of electronic structure of the material. In comparison with the sputtering methods, in the chemical solution deposition method, there is a high control in the formation of solid deposits with different combinations of metal and non-metal binary compounds. Changing the selenide ionconcentration changes the size of the energy band gap. It has been observed that the energy gap increases with the increase of selenide non-metal ion concentration.