Numerical Study of SiC Deposition Rate and its Quality in a Tubular Hot Reactor Using Polymeric Source

Silicon Carbide thin film deposition in a tubular hot reactor, using a polymeric source at atmospheric pressure has been studied numerically. A three dimensional model was considered based on the finite volume method. The effects of substrate position, concentration of the polymeric source and the substrate temperature on the deposition rate and on the quality of the deposited layer were investigated. It is shown that the deposition rate increased by decreasing the substrate distance, however the uniformity of deposited layer decreased. The rate of deposition increases with the polymeric source concentration while it decreases with the substrate temperature.