Silicon Carbide Synthesis by Microwave-Assisted SHS Reaction in a SiO2-Mg-C System

In the present research work possibility of Silicon Carbide (SiC) synthesis in a SiO2-Mg-C system by use of a low power domestic microwave (850W) heating device has been studied. It has been concluded that Silicon (Si) is easily reduced by Mg and subsequently reacts with carbon to form SiC. According to the experimental results، it has been revealed that carbon content of the initial mixture has only a small effect on the carbide formation process. The amount of SiC in the final product increases considerably if the heat of reduction reaction of SiO2 by Mg is not allowed to escape from the system easily and remains for a period of time which is necessary for the progress of carbide formation reaction. This fact indicates while the reduction reaction is vigorous with a SHS nature، carbide formation is relatively slower and needs to proceed for a longer time at higher temperatures