Analysis and Design of High Gain, and Low Power CMOS Distributed Amplifier Utilizing a Novel Gain-cell Based on Combining Inductively Peaking and Regulated Cascode Concepts

In this study an ultra-broad band, low-power, and high-gain CMOS Distributed Amplifier (CMOS-DA) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. It is created by cascading of inductively coupled common-source (CS) stage and Regulated Cascode Configuration (RGC). The proposed three-stage DA is simulated in 0.13 μm CMOS process. It achieves flat and high of 26.5 ± 0.4 dB over the frequencies range from DC up to 13 GHz 3-dB bandwidth, and it dissipates only 9.95 mW. The IIP3 is simulated and achieved -10 dBm at 6 GHz. Also, simulated input referred 1-dB compression point at 6 GHz achieves the value of -20 dBm. Both input and output matches are better than -11 dB. To obtain the low power and high gain requirements, the advantages of the bulk terminal are exploited in the proposed CMOS-DA. It adopts the method of forward body biasing in output MOS transistor to achieve higher transconductance and lower power consumption. Additionally, the Monte Carlo (MC) simulation is performed to take into account the risks associated with various input parameters which they receive little orno consideration in simulating of designs utilizing ideal components. MC simulation predicts an estimate of the good accuracy performance of the proposed design under various conditions.