A novel SOI MESFET by using an additional Oxide Region in channel for high power and high frequency applications

In this paper a novel SOI MESFET presented which has better DC and frequency characteristics compared with conventional one. The key idea of this work is modifying carrier concentration by using an additional Oxide Region in channel (ORSOI MESFET) which attach to buried oxide at drain side. In proposed structure break down voltage improves from 13V for Conventional SOI MESFET (C-SOI MESFET) to19V for OR-SOI MESFET by about 47% increasement, so Pmax improved from 0.19 W/mm to 0.25 W/mm. also, frequency parameters such as cut-off frequency (ft), Maximum oscillation frequency (fmax), and Minimum figure noise (Fmin) improved as a result of decreasing gate-drain (Cgd) and gate-source (Cgs) Capacitances. Simulation results show that OR-SOI MESFET has better power and frequency parameters respect with C-SOI MESFET.