Probing the Nature of Annealing Silicon Carbide Samples for Solar Cell

SiC powder preparation using Sol-Gel method. The size of nano-particles grows as the temperature exceeds 900° C. Size of probable agglomerations produced, is approximately less than 50nm. The surface is suitable to be used for dye solar cells. SiC emission occurs at wavelength area of 11.3μm or wave number area of 884.95 cm-1. In this paper probing the nature of annealed SiC samples in mixture, sintered, burned, and washed with Si, being removed. We can conclude that the efficiency in trapping solar energy increases.