Spin transport in a superlattice silicene nanoribbon

In this article, we investigate the spin transport properties of a superlattice silicene nanoribbon connected to two semi-infinite metallic leads, in the tight-binding model and Green's function approach, and in the presence of disorder and electric and exchange fields. Our calculations show that the metal-semiconductor phase transition occurs, when a perpendicular electric field and/or disorder is applied to the system. Also by changing the steplike electric field, the width of the energy gap will be controlled. In addition, by applying the disorder such as vacancy and impurity, the conductance of the system decreases and its band gap increases. Namely, the band gap of the system can be tuned by varying the relevant parameters, such as disorder concentration, steplike electric field and exchange field strength.