Theoretical Study of the SnS2 Nanostructure Performance as a Buffer Layer in CuIn1-xGaxS(e)2 Solar Cell and its Comparison with CdS

Author(s):

M. Haghighi , M. Minbashi , N. Taghavinia * , S. M. Mahdavi , A. A. Kordbacheh

Message:
Article Type:
Research/Original Article (دارای رتبه معتبر)
Abstract:
In this paper, firstly, the CIGSe solar cell with a different Ga/Ga In ratio was modeled based on experimental data using the SCAPS software. Then, the SnS2 composition was proposed as a suitable buffer for the elimination of toxic CdS compounds. According to the modeling results, SnS2 is a very suitable material for substitution of the toxic CdS.
Keywords:

CIGS(e) solar cell , SCAPS software , Buffer layer , SnS2 nanostructure layer , Conduction band offset

Language:
Persian
Published:
Nano scale, Volume:5 Issue: 1, 2018
Pages:
101 to 106
https://www.magiran.com/p1850878