Investigation the effect of In-doping on the structural and optical properties of electrodeposited SnS thin film

Undoped and In-doped SnS thin films have been prepared using an electrochemical deposition method. The bath temperature, deposition time, deposition potential, and pH kept constant at 60 ℃, 30 minutes, -1 V and 2.1, respectively. The synthesized un- and In-doped SnS thin films have been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), room temperature photoluminescence (PL), and UV-vis spectroscopy. The XRD patterns showed that the crystalline quality and crystallite size has been decreased after In-doping. The morphology of un-and In-doped SnS thin films was grain-like. A new PL emission peak has been appeared after In-doping. The absorbance spectra of In-doped SnS thin films have been improved, compared with that of undoped SnS. In addition, the band gap energy of undoped SnS is decreased from 1.5 eV to 1.45 eV due to In-doping. Therefore, all results showed that the key role of indium dopant on the structural and optical properties of SnS thin films.