Analysis of the Nonlinear Effects in the Silicon Photonics

Optical interconnects as appropriate alternatives for electrical interconnects in the computer chips and boards can be realized by CMOS-based integrated silicon photonics. Dielectric slot waveguide, as one of the newest optical waveguide structures, can form the infrastructure of the passive and active components in these integrated circuits. The passive components have the linear behavior. In order to realize the all-optical active components such as laser, amplifier, and modulator we can use the nonlinear effects in the silicon photonics waveguides. On the other hand, Si-nc:SiO2 as a new material, has a stronger nonlinear property than Si. The results of the full-wave analyzes of the slot waveguide in the linear and nonlinear regimes show that the slot region of this waveguide can be filled with the Si-nc:SiO2 and also realize a high optical intensity. Therefore, this waveguide intensifies the nonlinear behaviors by two factors