Triple-Gate MOSFET Transistor using the Silicon-Germanium Tunneling Diode for Kink Effect Improvement

This paper proposes a new structure of triple-gate transistors (SG-TD). By using the silicon-germanium in the source region and creating a diode tunneling inside the source, the characteristic of the proposed triple-gate MOSFET is improved in comparison with a conventional triple-gate MOSFET (C-TG). In the proposed structure , not only insulation under of the transistor channel is maintained, but also it reduces the negative effects. In the structure to prevent the accumulation of holes in the channel region, the silicon-germanium have used. This can reduce the floating body effect (FBE), the self-heating effect (SHE), and the current density of holes in the proposed triple-gate MOSFET . The proposed structure is simulated with 3D-Silvaco software.