A Novel Nano MOSFET for Increasing the Device Reliability

In this paper, a novel nano MOSFET is presented to enhance the electrical performance of the device. The name of the new structure is QSZ-MOSFET which includes 4 silicon zones in the channel and buried oxide. The N type silicon zones in the channel create the depletion regions that increase the current capability of the device. Moreover, the majority of the created holes by the floating body effect are absorbed by these zones. The P silicon zones in the buried oxide have more conductivity than oxide and help to reduce the lattice temperature and make a path for passing the heat from the active region of the transistor to the substrate. The proposed and conventional structures performances are simulated by ATLAS simulator which shows the advantages of the proposes structure.