Growth of standing MoS2 nanoflakes by Chemical Vapor Deposition

Interesting electronic and catalytic properties of two-dimensional MoS2 few-layers have attracted the attention of researchers today. In this paper, the synthesis of MoS2 nanoflakes standing on the SiO2/Si substrate in the process of rapid sulfidation by chemical vapor deposition has been reported. Material characterization was performed using Raman spectroscopy, XRD and FE-SEM. The XRD results indicate the dominant phase of 2H-MoS2 and the distance between the two leading peaks of E12g and A1g in the Raman dispersion confirms the thickness of 6 to 10 atomic layers. According to the experimental data, the growth mechanism was introduced based on nucleation and growth of two-dimensional islands, and in the next stage, coalescence of these two-dimensional islands and in the final stage, standing nanoflakes grow. These structures that have active sites on the edges have many potential and promising applications in fine transistors, gas sensors and catalytic reactions.