The Investigation of the Half-metallic Properties of Mn-doped SiC Monolayer for Nanospintronic Applications

 In this study, the structural, electronic and magnetic properties of silicon carbide monolayer coated with manganese have been investigated. The results of the electrical properties show that, in contrast to graphene, the pristine SiC monolayer has a sizeable band-gap which makes it suitable for application in electronics industry. The most stable structure was identified by considering manganese atoms on carbon atoms, silicon atoms, and hexagon centers with doing the complete relaxations of atomic positions and cell parameters. The results of the calculations show that the most stable state of this compound is related to the case when manganese atoms are deposited on carbon atoms. Therefore, the electronic and magnetic properties are calculated for this structure. The partial and total density of states indicate the existence of half-metallicity in this compound. As a result, this monolayer can be used to make Nano spintronic components and spin valves. Also, in this paper, we tried to study the mechanism for the formation of half-metallic by plotting spin-dependent band structure diagrams and comparing them with the partial density of states.