Scanning Probe Microscope application in the fabrication of Single Electron Transistors

Single-electron transistors (SETs) are one of the most basic single electron tools and have received much attention in the field of nanoelectronics. These types of transistors have very low consumption power, high performance speed, low conductivity losses, good controllability and the ability to miniyator to nanometer dimensions. A single electron transistor is a nanometer switching device that controls the movement of electrons. Due to their scope of working and in order to useing this type of transistor at ambient temperature with a minimum of Coulomb oscillations, makeing of this type of transistor with small quantum islands is very important. Nowdays, with the useing of scanning tunneling microscopes (STM) and atomic force microscopy (AFM), it is possible to makeing these types of transistors with islands in the range of a few nanometers with stable Coulomb oscillations at room temperature. In this paper, the basis of the working of single electron transistor and different methods of using scanning probe microscopes in their construction will be investigated.