Effect of Hydrostatic Pressure on Minimum nose of AlGaN/GaN high electron mobility transistors

In this paper, a numerical model for calculating the density and electron current of quantum wells of AlGaN / GaN transistors is presented by considering hydrostatic pressure, which enables the effect of pressure on mutual conductivity, quantum well subbands, surface and volume leakage currents and finally check for minimum noise. In this model, a self-consistent solution of Schrodinger and Poisson equation is used to obtain a two-dimensional electron gas density in which up to five energy subbands are considered. An increase in hydrostatic pressure is equivalent to creating a virtual gate adjacent to a real gate., which increases the quantum well depth, current and electron density, cross-conduction, leakage currents, and finally the minimum noise. As the pressure increases, the quantum well subbandes are compressed downward, and the electron-dependent energy increases and the quantum confinement increases. Also, at any desired frequency and drain-source current, increasing the pressure increases the minimum noise. The calculated results are in good agreement with the available experimental data.