Design and simulation of low power dual band low noise amplifier for wireless LAN applications

The following paper presents the design and simulation of a low-noise amplifier (LNA) using complementary low power-metal oxide (CMOS) transistors for LAN applications (WLAN 802.11). Input The external capacitor switch connected to the gate-source transistor input node is used in 2 bands of 4.2 and 2.5 GHz. In simultaneous structures using the resonant frequency of the LC tank circuit, the desired frequency is selected, while in the proposed LNA structure, this frequency selection is done only by adding a capacitive switch to the normal degenerate source structure. This reduces the occupied space. It has structures in the circuit compared to others. In addition, the use of the transistor switch technique reduces the power consumption compared to other structures LNA. The offer has a 1 volt power supply and a current of 3.2 mA. The circuit has scattering parameters S11 and S22 less than 19 dB in both frequency bands and has noise numbers of 3.2 and 3.5 dB at 4.2 and 2.5 GHz, respectively. Power output is greater than 20 dB