A Review on Static and Dynamic ‎Characterization of Digital Circuits in ‎CNTFET and CMOS Technology

In this paper we review a procedure to characterize digital circuits in CNTFET and CMOS technology in order to compare them. To achieve this goal, we use a semi-empirical compact CNTFET model, already proposed by us, and the BSIM4 model for MOS device. After a brief review of these models, as example, we review the static and dynamic characterization of </strong>NAND gate and Full Adder, using the software Advanced Design System (ADS) which is compatible with the Verilog-A programming language. The obtained results allow to highlight the differences between the two technologies.