Evaluation of leakage current variations of silicon diode irradiated by reactor neutrons using molecular dynamic calculations

In this work, the leakage current variation of a silicon diode, as the basic element of many electronic components, has been investigated in the exposure by neutron spectrum of a typical thermal rector. To determine the PKA spectrum, the MCNPX Monte Carlo code has been used to calculate the non-ionizing energy loss in the device. Molecular Dynamic Calculations are used to determine the number of reactor neutron induced defects in a silicon diode. The simulation of electrical parameters for irradiation of reactor neutron was also done by SILVACO software. The results show that the leakage current increases by about 6.82 times the amount of it before irradiation, up to about 3.54 nA/μm by the exposure of neutrons.