Utitilizatition of Transmission Electron Microscopy for development, analysis, and failure detectition in semiconductor industry

In recent years, advanced technologies were applied to semiconductor industry and as a result the size of its features is scaling down drastically. In order to improve its devices performance, this industry needs to keep reducing the size of the parts that it manufactures even more. Meanwhile transmission electron microscopy (TEM) plays an important part in development, manufacturing and fault analysis of the semiconductor industry devices. After witnessing recent advances in TEM field in respect to preparing and imaging of semiconductor specimens, we can no longer limit the utilization of TEM in just academic fields and should apply TEM techniques to thoroughly assess and analyze semiconductors faults that cannot be revealed or examined by any other available methods. TEM techniques not only provide the superior spatial resolution in comparison to other advanced methods, but they also offer ultra-sensitive elemental analysis ability to characterize sub-nanometer materials in semiconductor industry. In this field TEM can be used for applications such as: examining semiconducting devices defects, evaluating surface and interfacial features, identifying device dimensions, and etc. in this article, different types of techniques for semiconductor specimen preparation, analyzing and imaging using TEM have been presented