A Synthesis and an Investigation of Crystalline, Morphological and Optical Properties of CFTS Symmetric Quaternary Stannite Semiconductor Structures for Use in New-Generation Solar Cells

CFTS semiconductor particles with the structure of Cu2FeSnS4 have attracted the attention of researchers as one of the newest materials in the field of absorber layer of thin film solar cells and interlayer layer in perovskite solar cells. This P-type structure has greatly raised the hopes to achieve an efficient low-cost structure due to the use of abundant elements in the earth's crust, direct band gap in the range of solar radiation intensity, and high absorption coefficient (104 cm−1). The synthesis of CFTS semiconductor nanoparticles was performed through a solvothermal process with simple and cheap precursors. The degree of crystallinity and the direction of crystal growth of the structure were evaluated by XRD analysis. The topography of the particles was carried out through a field emission scanning electron microscope (FE-SEM), and the percentage of the elements of the structure was determined through EDS analysis. The band gap of the particles was calculated through UV-Vis spectroscopy and the absorption spectrum of the structure. The results of the XRD analysis indicated the formation of a structure with high purity and a favorable degree of crystallinity. The average size of the particles was obtained to be in the range of 1-2 µm, and the particles were uniform spheres with a sheet-like surface. The results of EDS analysis indicated an optimal percentage of structural elements and a band gap of particles in the range of 1.43 eV, indicating good agreement with the reported values.