Redistribution of implanted Arsenic (AS) on the rate of oxide growth during steam oxidation of Si

In this article, we investigate the redistribution of implanted As+ ion and effect of it on the rate of oxide growth during steam oxidation of Si wafers at 900oC. Our results show that a highly enriched, thin layer of Arsenic forms at the interface between the oxide and the underlying Si. Also, the oxidation rate was found to increase depending on the depth distribution and dose of the implanted impurity As. The thin As layer collected at the interface can be used in the design of shallow junctions. Rutherford Backscattering Spectroscopy(RBS) was used to investigate the oxide characteristics.