Simulation of doping type and current density effects on porous silicon growth by modified limited diffusion aggregation method

The aim of this article is apply modification to limited diffusion aggregation model. The method can simulate the doping type and current density on obtained structures forms within porous silicon growth. For doping type effect, the sticking coefficient parameter and for the current density effect, mean field parameter applied to limited diffusion aggregation. Simulation results showed that the sticking coefficient parameter influences pores thickness controlling. Meanwhile, the mean field parameter could control tree or rod characteristics of pores. Results on porous silicon growth simulation showed that the applied modifications accompany with these two parameters on structure simulation formation are consistence with experimental data of the samples.