A New BiCMOS Circuit for Driving Large Capacitive Load

In this paper regarding the fact that the collector current and therefore Base current are needed for a very short time, in order to drive large capacitive load, using BiCMOS technology, we have used the existing capacitor between source and gate of MOS transistors to do so. This method has increased the speed of the circuit in comparison to its similar circuits, and it needs very low static power dissipation. In this design, remarkable reduction of the number of transistors has lead to a significant improvement in chip area.