Random corrugation intrfacial roughness effects on transmission coefficients on tunneling magnetic resonance diodes

In this paper، the effect of interface roughness has been studied on spin-dependent electronic transmission in a magnetic tunnel junctions (MTJs). The transfer matrix method and effective mass approximation are used for calcilating the transmission probability. The magnetic double barrier structure consists of two ferromagnetic semiconductor (FMS) barriers which seperated by a nonmagnetic layer that is connected to two nonmagnetic metal electrodes. The different components of spin-dependent transmission probabilities (direct and indirect) have been studied for different thicknesses of quantum which in case that roughness is distributed at the interfaces as some random islands. The results of calculation show that interface roughness effectively affects the electron transport through the double barrier structures. Because scattering and opening the new addition conduction channels have a main effect in reducing of the peak of transmission probabilities. Also، influence of the amount of interface roughness is studied on scattered components of transmission probabilities.