Introducing a modified model for short-channel MOSFET modeling And parameter optimization using gravitational search algorithm

The rapid advance of technology and the subsequent reduction size of the MOSFET transistors has led to different behavior of the transistors in electronic circuits. In recent decades، many models are presented to estimate the behavior of short-channel MOSFET transistors. In This paper، a new model is proposed to predict the short-channel MOSFET transistor behavior. This model، increases the accuracy and reduces the error rate of the “nth-power law MOS” against the original one. parameters of the proposed model is optimized and compared with the actual Characteristic BSIM3 at 130nm technology and TSMC_CM018RF at 180nm technology. These devices have Many applications in electronic circuits، especially high-frequency circuits. In order to increase the accuracy of the proposed model، its parameters are optimized by a heuristic optimization algorithm. To this، three algorithms including genetic algorithm، particle swarm optimization and gravitational search algorithm are compared. The experimental results indicate that for the proposed model، gravitational search algorithm has got better parameters.