A Novel Source/Drain side Double Recessed Gate 4H-SiC MESFET with n-Buried Layer in the Channel

A new structure named as source/drain sides-double recessed gate with N-buried layer in the channel (SDS-DRG) silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is presented in this study. Important parameters such as short channel effect, maximum DC trans-conductance, drain current and breakdown voltage of the proposed structure are simulated and compared with those of the source side-double recessed gate (SS-DRG) and drain side-double recessed gate (DS-DRG) 4H-SiC MESFETs. Our simulation results reveal that reducing the channel thickness under the gate at the SDS-DRG structure improves the maximum DC trans-conductance and reduces the short channel effects compared to SS-DRG and DS-DRG structures. Reducing the channel thickness under the gate at the drain side of the SDS-DRG structure is used to enhance the breakdown voltage in comparison with the SS-DRG structure. Also, N-buried layer with larger doping concentration in the SDS-DRG structure improves the saturated drain current compared to SS-DRG and DS-DRG structures.