Statistical Analysis and Modeling of CMRR and PSRR Random Variations in a Nano-CMOS Transconductance Amplifier

With advancement of integrated circuit technology and aggressive scaling into nanometer regime, statistical variability in device electrical characteristics caused by discreteness of charge and fabrication process variations has significantly increased. These variations in turn result in fluctuations in output characteristics of important analog building blocks and in particular, amplifiers. In this paper, with the aid of Monte-Carlo simulations for a transconductance amplifier and using 1000 different compact models of MOSFET transistors in 35nm technology node, statistical variations of important circuit parameters are investigated and analyzed based on their statistical distributions. Moreover, statistical correlations between circuit parameters are extracted. Analysis of statistical variations for circuit parameters and their correlations has a direct impact on reduction of cost and time of a design and thus, is of great amount of significance.