Digital and analog performance enhancement of nanotube heterojunctionless tunnel FET using core-shell gate technology

This paper introduces a nanotube heterojunctionless tunneling field-effect transistor (NT-HJLTFET) thatcombines core-shell gate technology with a Ga0.8In0.2As/Ga0.85In0.15Sb heterojunction to enhance deviceperformance. The NT-HJLTFET achieves anION/IOF Fratio of 9.84×1013, an average subthreshold slope(SS) of 9.4 mV/dec,IONof 6.4 mA, transconductance (gm) of 17.5 mS, and unit gain cutoff frequency (fT) of42.7 THz. These results represent a significant improvement in performance, including a nearly two orders ofmagnitude increase inION,gm, andfTcompared to silicon-based nanotube junctionless tunneling field-effecttransistor (NT-JLTFET). The NT-HJLTFET also exhibits a five orders of magnitude enhancement inION/IOF Fand a 76% improvement in SS. Additionally, the presence of defects is shown to decreasefT, impacting thedevice’s high-frequency response. These findings suggest that the NT-HJLTFET is a promising candidate foruse in both digital and analog applications in integrated circuits.