Equivalent Circuit Modeling of a Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD)

Using some simplifying assumptions in a separate absorption and multiplication avalanche photodiode (SAM-APD), in this paper we develop a circuit model. Then, using this circuit model, we calculate the gain and the quantum efficiency of the device. To examine the accuracy of the device, we compare the results obtained from the model with the experimental results. A fairly good correspondence between the model an the experimental results, shows that this model is capable of predicting the device behavior, while varying different parameters such as applied bias, device size, and hence the light wavelength.