Investigation of Effect of Accumulation Layer Thickness of ENZ material on Electro-Absorption Modulator

In this paper, the performance of an optical modulator based on indium tin oxide is investigated at telecommunication wavelength for different accumulation thickness. The plan of metal-oxide-semiconductor is utilized to change the carrier concentration at indium tin oxide-hafnium oxide interface. An optical mode solver based finite element method has been used to calculate the basic parameters such as the insertion loss and extinction ratio. A typical model is presented for carrier concentration modeling of indium tin oxide. The simulation result shows a peak in insertion loss plot with value of 8.4 dB/μm. Also, the variation of ITO and HfO2 thicknesses have been investigated. The results show that by increasing the thicknesses, insertion loss and extinction ratio decrease. Furthermore, the effect of accumulation layer thickness of indium tin oxide is investigated on modulator performance.