Growth, structural characterization and Electrical Behavior of Silicon Nano Particles prepared by Evaporation Method with Electron Beam

Silicon nano particles were fabricated at angles، 0، 75 and 85 degrees on p-Si (111) wafer by evaporation method with electron beam. Sheet resistance of samples were measured by Van der Pauw method and compared with silicon wafer one''s. Results showed that by increasing angle from 75° to 85° silicon nano particles were formed by more porosity، therefore 85° sample can carry more current in similar voltages. Mean while surface area and sheet resistivity of 75° sample was more than 85° sample and also 85° sample was more than silicon wafer. Surface morphology and SEM surface picture were studied. Results showed that samples with more porosity had low sheet resistance. Also، I-V characteristic of nSi/p-Si (111) junction were reviewed. This junction had non linear electric and diode like behavior.