Conductivity and electrical surface difference studies on polycrystalline thin films CuInTe2 and CuInSe2 with excess Indium

The Studies of the electrical properties for P-type thin films of CuInTe2 and CuInSe2 polycrystalline with the effect of excess Indium، Showed that conductivity and with the help of Hall coefficient RH and Hall mobility µH for different temperature at various gate field. It indicated that in P-CuInTe2، the variation of RH has been increased with temperature to grain boundary which started from 170 k by increasing few percent Indium to the stoichiometric charge. The value of Hall Co-efficient in the range of 77-200 k remained constant. By increasing few percent Indium to P-CuInSe2، the values of RH above 150 k due to increase of grain boundary distance. In this paper، Hall mobility values were studied.